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VP2110K1-G
VP2110K1-G
MOSFETs VP2110K1-G
Microchip Technology
VP2110K1-G
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Diodes, Transistors and Thyristors
MOSFETs
VP2110K1-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.3
Package Height0.95
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Standard Package NameSOT
Typical Fall Time (ns)4
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.12
Typical Input Capacitance @ Vds (pF)45@25V
Maximum Drain Source Resistance (MOhm)12000@10V
Description
Trans MOSFET P-CH Si 100V 0.12A 3-Pin SOT-23 T/R
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