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VP2206N2
VP2206N2
MOSFETs VP2206N2
Microchip Technology
VP2206N2
--
Diodes, Transistors and Thyristors
MOSFETs
VP2206N2.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Height6.6(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Process TechnologyDMOS
Standard Package NameTO-205-AF
Typical Fall Time (ns)22
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)6000
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)16
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.75
Typical Input Capacitance @ Vds (pF)325@25V
Maximum Drain Source Resistance (MOhm)900@10V
Description
Trans MOSFET P-CH Si 60V 0.75A 3-Pin TO-39 Bag
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