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VQ1000P-2
VQ1000P-2
MOSFETs VQ1000P-2
Vishay
VQ1000P-2
--
Diodes, Transistors and Thyristors
MOSFETs
VQ1000P-2.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count14
AutomotiveNo
Lead ShapeThrough Hole
PCB changed14
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad
Package Width7.11(Max)
Package Height3.81(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackagePDIP
Standard Package NameDIP
Number of Elements per Chip4
Maximum Power Dissipation (mW)2000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.225
Typical Input Capacitance @ Vds (pF)22@25V
Maximum Drain Source Resistance (mOhm)5500@10V
Description
Trans MOSFET N-CH 60V 0.225A 14-Pin PDIP T/R
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