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VQ1006P-E3
VQ1006P-E3
MOSFETs VQ1006P-E3
Vishay
VQ1006P-E3
--
Diodes, Transistors and Thyristors
MOSFETs
VQ1006P-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count14
AutomotiveNo
Lead ShapeThrough Hole
PCB changed14
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad
Package Width7.11(Max)
Package Height3.81(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackagePDIP
Standard Package NameDIP
Number of Elements per Chip4
Maximum Power Dissipation (mW)2000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)90
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.4
Typical Input Capacitance @ Vds (pF)35@25V
Maximum Drain Source Resistance (mOhm)4500@10V
Description
Trans MOSFET N-CH Si 90V 0.4A 14-Pin PDIP
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