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WPB4002-1E
WPB4002-1E
MOSFETs WPB4002-1E
onsemi
WPB4002-1E
--
Diodes, Transistors and Thyristors
MOSFETs
WPB4002-1E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)100
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)84
Typical Rise Time (ns)130
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)84
Typical Gate Charge @ Vgs (nC)84@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)42
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)234
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23
Typical Input Capacitance @ Vds (pF)2200@30V
Maximum Drain Source Resistance (MOhm)360@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 23A Tube
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