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ZXM61N02FTC
ZXM61N02FTC
MOSFETs ZXM61N02FTC
Diodes Incorporated
ZXM61N02FTC
--
Diodes, Transistors and Thyristors
MOSFETs
ZXM61N02FTC.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.98
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT-23
Typical Fall Time (ns)4.2
Typical Rise Time (ns)4.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)806
Typical Gate Charge @ Vgs (nC)3.4(Max)@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)50
Typical Turn-On Delay Time (ns)2.4
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.55
Typical Turn-Off Delay Time (ns)7.8
Maximum Diode Forward Voltage (V)0.95
Typical Gate to Drain Charge (nC)0.8(Max)
Maximum Gate Threshold Voltage (V)0.7(Min)
Minimum Gate Threshold Voltage (V)0.7
Typical Gate to Source Charge (nC)0.41(Max)
Typical Reverse Recovery Time (ns)12.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)160@15V
Typical Reverse Recovery Charge (nC)5.2
Maximum Drain Source Resistance (mOhm)180@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)7.4
Maximum Power Dissipation on PCB @ TC=25°C (W)0.806
Typical Reverse Transfer Capacitance @ Vds (pF)30@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1.7
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)200
Description
Trans MOSFET N-CH 20V 1.7A 3-Pin SOT-23 T/R
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