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MOSFETs ZXMHC3A01T8TA
Diodes Incorporated
ZXMHC3A01T8TA
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Quad |
| Package Width | 3.7(Max) |
| Package Height | 1.6(Max) |
| Package Length | 6.7(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SM |
| Process Technology | TMOS |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 2.9@N Channel|7.5@P Channel |
| Typical Rise Time (ns) | 2.3 |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 1700 |
| Typical Gate Charge @ 10V (nC) | 3.9@N Channel|5.2@P Channel |
| Typical Gate Charge @ Vgs (nC) | 3.9@10V@N Channel|2.6@5V|5.2@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 1.7@N Channel|1.2@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 6.6@N Channel|12.1@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.7@N Channel|2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 190@25V@N Channel|204@15V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 120@10V@N Channel|210@10V@P Channel |
| Description |
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