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ZXMN6A11ZTA
ZXMN6A11ZTA
MOSFETs ZXMN6A11ZTA
Diodes Incorporated
ZXMN6A11ZTA
--
Diodes, Transistors and Thyristors
MOSFETs
ZXMN6A11ZTA.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryPower MOSFET
Supplier PackageSOT-89
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)4.6
Typical Rise Time (ns)3.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2600
Typical Gate Charge @ 10V (nC)5.7
Typical Gate Charge @ Vgs (nC)5.7@10V|3@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)35.2
Typical Turn-On Delay Time (ns)1.95
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.2
Typical Turn-Off Delay Time (ns)8.2
Maximum Diode Forward Voltage (V)0.95
Typical Diode Forward Voltage (V)0.85
Typical Gate to Drain Charge (nC)0.86
Maximum Gate Threshold Voltage (V)2.2
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)1.25
Typical Reverse Recovery Time (ns)21.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)330@40V
Typical Reverse Recovery Charge (nC)20.5
Maximum Drain Source Resistance (mOhm)120@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)14.5
Maximum Power Dissipation on PCB @ TC=25°C (W)2.6
Typical Reverse Transfer Capacitance @ Vds (pF)17.1@40V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)2.7
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)83.3
Description
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-89 T/R
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