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Memory Modules M470L6524DU0-CB3
Samsung Electronics
M470L6524DU0-CB3
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Memory
Memory Modules
Specification
| Product Attribute | Attribute Value |
| PLL | No |
| PPAP | No |
| Module | DRAM Module |
| EU RoHS | Compliant |
| Mounting | Socket |
| ECCN (US) | EAR99 |
| Pin Count | 200 |
| Automotive | No |
| Lead Shape | No Lead |
| CAS Latency | 2.5 |
| ECC Support | No |
| Module Type | 200USODIMM |
| PCB changed | 200 |
| Part Status | Obsolete |
| Subcategory | DDR SDRAM |
| Module Sides | Double |
| Organization | 64Mx64 |
| Self Refresh | Yes |
| Package Width | 3.8(Max) |
| Module Density | 512Mbyte |
| Package Height | 31.75 |
| Package Length | 67.6 |
| Refresh Cycles | 8K |
| Number of Ranks | Dual |
| Supplier Package | USODIMM |
| Chip Package Type | 66TSOP-II |
| Chip Configuration | 32Mx16 |
| Chip Density (bit) | 512M |
| SPD EEPROM Support | Yes |
| Data Bus Width (bit) | 64 |
| Max. Access Time (ns) | 0.7 |
| Operating Current (mA) | 1000 |
| Maximum Clock Rate (MHz) | 333 |
| Number of Chip per Module | 8 |
| Supplier Temperature Grade | Commercial |
| Maximum Operating Temperature (°C) | 70 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Supply Voltage (V) | 2.7 |
| Minimum Operating Supply Voltage (V) | 2.3 |
| Typical Operating Supply Voltage (V) | 2.5 |
| Description |
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