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Memory Modules MT16HTF25664HY-53EE1
Micron Technology
MT16HTF25664HY-53EE1
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Memory
Memory Modules
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Module | DRAM Module |
| EU RoHS | Compliant |
| Mounting | Socket |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 200 |
| Automotive | No |
| Lead Shape | No Lead |
| CAS Latency | 4 |
| ECC Support | No |
| Module Type | 200SODIMM |
| PCB changed | 200 |
| Part Status | Obsolete |
| Subcategory | DDR2 SDRAM |
| Organization | 256Mx64 |
| Package Width | 3.8(Max) |
| Module Density | 2Gbyte |
| Package Height | 30.15(Max) |
| Package Length | 67.75(Max) |
| Number of Ranks | Dual |
| Supplier Package | SODIMM |
| Chip Configuration | 128Mx8 |
| Chip Density (bit) | 1G |
| Data Bus Width (bit) | 64 |
| Max. Access Time (ns) | 0.05 |
| Standard Package Name | DIM |
| Operating Current (mA) | 1056 |
| Maximum Clock Rate (MHz) | 533 |
| Number of Chip per Module | 16 |
| Supplier Temperature Grade | Commercial |
| Maximum Operating Temperature (°C) | 70 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Supply Voltage (V) | 1.9 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Description |
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