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NCS20094DR2G
NCS20094DR2G
Op Amps NCS20094DR2G
onsemi
NCS20094DR2G
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Amplifier
Op Amps
NCS20094DR2G.pdf
Specification
Product AttributeAttribute Value
HTS8542.33.00.01
PPAPNo
TypeLow Power Amplifier
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count14
AutomotiveNo
Lead ShapeGull-wing
Output TypeCMOS
PCB changed14
Part StatusActive
Rail to RailRail to Rail Input/Output
Package Width4(Max)
Package Height1.5(Max)
Package Length8.75(Max)
Supplier PackageSOIC N
Manufacturer TypeLow Power Amplifier
Minimum CMRR (dB)55
Minimum PSRR (dB)63
Power Supply TypeSingle
Shut Down SupportNo
Process TechnologyCMOS
Standard Package NameSOP
Minimum CMRR Range (dB)50 to 60
Typical Slew Rate (V/us)0.15@5.5V
Typical Voltage Gain (dB)120
Typical Settling Time (ns)27000
Number of Channels per Chip4
Typical Output Current (mA)7.5
Maximum Power Dissipation (mW)200
Maximum Quiescent Current (mA)0.092(Typ)@5.5V
Maximum Input Bias Current (uA)0.0015@5.5V@-40C to 125C
Typical Input Bias Current (uA)0.000001@5.5V
Maximum Input Offset Current (uA)0.0011@5.5V@-40C to 125C
Maximum Input Offset Voltage (mV)4@5.5V
Maximum Single Supply Voltage (V)5.5
Minimum Single Supply Voltage (V)1.8
Typical Single Supply Voltage (V)3|5
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Typical Gain Bandwidth Product (MHz)0.35
Typical Input Noise Voltage Density (nV/rtHz)40@5.5V
Typical Noninverting Input Current Noise Density (pA/rtHz)0.3@5.5V
Description
Op Amp Quad Low Power Amplifier R-R I/O 5.5V 14-Pin SOIC N T/R
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