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HIP6603BECBZ-T
HIP6603BECBZ-T
Other Integrated Circuits HIP6603BECBZ-T
Renesas Electronics
HIP6603BECBZ-T
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Integrated Circuit
Other Integrated Circuits
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
Channel TypeSynchronous
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Product StatusObsolete
Voltage - Supply10.8V ~ 13.2V
Number of Drivers2
Driven ConfigurationHalf-Bridge
Operating Temperature0°C ~ 125°C (TJ)
Rise / Fall Time (Typ)20ns, 20ns
Supplier Device Package8-SOIC-EP
High Side Voltage - Max (Bootstrap)15 V
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
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