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S80KS5122GABHI020
S80KS5122GABHI020
PSRAM S80KS5122GABHI020
Infineon
S80KS5122GABHI020
--
Memory
PSRAM
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)3A991.b.1.a
PackagingTray
Part StatusActive
Timing TypeSynchronous
Number of Ports1
Number of Words64M
Chip Density (bit)512M
Process TechnologyCMOS
Data Rate ArchitectureDDR
Address Bus Width (bit)32
Maximum Access Time (ns)35(Min)
Maximum Clock Rate (MHz)400
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Maximum Operating Supply Current (mA)44
Description
PSRAM Sync Single Port 512M-bit 64M x 8 35ns Tray
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