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2N5770
2N5770
RF BJT 2N5770
onsemi
2N5770
--
Diodes, Transistors and Thyristors
RF BJT
2N5770.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Output Power (W)0.03(Min)
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain20@3mA@1V|50@8mA@10V
Typical Power Gain (dB)15(Min)
Maximum Noise Figure (dB)6
Number of Elements per Chip1
Operational Bias Conditions10V/6mA
Minimum DC Current Gain Range2 to 30|30 to 50|50 to 120
Maximum Power Dissipation (mW)350
Typical Input Capacitance (pF)2(Max)
Typical Output Capacitance (pF)1.1(Max)
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)10
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Junction Case Thermal Resistance125°C/W
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance357°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.4@1mA@10mA
Description
Trans RF BJT NPN 15V 0.05A 3-Pin TO-92 Bulk
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