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BFG425W
BFG425W
RF BJT BFG425W
NXP
BFG425W
--
Diodes, Transistors and Thyristors
RF BJT
BFG425W.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageCMPAK
Standard Package NameCMPAK
Minimum DC Current Gain50@25mA@2V
Typical Power Gain (dB)20
Maximum Noise Figure (dB)1.2(Typ)
Number of Elements per Chip1
Operational Bias Conditions2V/25mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)135
Typical Input Capacitance (pF)0.575
Typical Output Capacitance (pF)0.3
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)1
Maximum Collector Base Voltage (V)10
Maximum Transition Frequency (MHz)25000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)12(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)4.5
Maximum Collector Cut-Off Current (nA)15
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)22(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.03A 135mW 4-Pin(3+Tab) CMPAK
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