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BFG540,215
BFG540,215
RF BJT BFG540,215
NXP
BFG540,215
--
Diodes, Transistors and Thyristors
RF BJT
BFG540,215.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageSOT-143B
Minimum DC Current Gain60@40mA@8V
Typical Power Gain (dB)18
Maximum Noise Figure (dB)2.4
Number of Elements per Chip1
Operational Bias Conditions8V/40mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.12
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)9000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)21(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum 3rd Order Intercept Point (dBm)34(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 15V 0.12A 400mW 4-Pin(3+Tab) SOT-143B T/R
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