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BFP 405 H6327
BFP 405 H6327
RF BJT BFP 405 H6327
Infineon
BFP 405 H6327
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain60@5mA@4V
Typical Power Gain (dB)23
Maximum Noise Figure (dB)1.25(Min)
Number of Elements per Chip1
Operational Bias Conditions2V/5mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)75
Typical Input Capacitance (pF)0.29
Typical Output Capacitance (pF)0.05
Maximum DC Collector Current (A)0.025
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)25000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)5(Typ)
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)4.5
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)15(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4.5V 0.025A 75mW Automotive 4-Pin(3+Tab) SOT-343 T/R
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