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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BFP181E7764HTSA1
BFP181E7764HTSA1
RF BJT BFP181E7764HTSA1
Infineon
BFP181E7764HTSA1
--
Diodes, Transistors and Thyristors
RF BJT
BFP181E7764HTSA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.3
Package Height1(Max)
Package Length2.9
Supplier PackageSOT-143
Standard Package NameTO-253-AA
Minimum DC Current Gain70@5mA@8V
Typical Power Gain (dB)21
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions8V/5mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)175
Typical Input Capacitance (pF)0.4
Typical Output Capacitance (pF)0.19
Maximum DC Collector Current (A)0.02
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)1000
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.02A 175mW Automotive 4-Pin SOT-143 T/R
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