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BFP182T-GS08
BFP182T-GS08
RF BJT BFP182T-GS08
Vishay
BFP182T-GS08
--
Diodes, Transistors and Thyristors
RF BJT
BFP182T-GS08.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed4
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageSOT-143
Standard Package NameTO-253-AA
Minimum DC Current Gain50@5mA@6V
Typical Power Gain (dB)18
Maximum Noise Figure (dB)2(Typ)
Number of Elements per Chip1
Operational Bias Conditions8V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.035
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)7500(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)10
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.4@1.5mA@15mA
Description
Trans RF BJT NPN 10V 0.035A 200mW 4-Pin SOT-143 T/R
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