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BFP650FE6327XT
BFP650FE6327XT
RF BJT BFP650FE6327XT
Infineon
BFP650FE6327XT
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
PCB changed4
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width0.8
Package Height0.55
Package Length1.4
Supplier PackageTSFP
Minimum DC Current Gain110@80mA@3V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)1.2
Maximum Collector Base Voltage (V)13
Maximum Transition Frequency (MHz)42000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)4
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4V 0.15A 500mW Automotive 4-Pin TSFP T/R
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