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BFP740E6327XT
BFP740E6327XT
RF BJT BFP740E6327XT
Infineon
BFP740E6327XT
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSiGe
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain160@25mA@3V
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Minimum DC Current Gain Range120 to 200
Maximum Power Dissipation (mW)160
Maximum DC Collector Current (A)0.045
Maximum Emitter Base Voltage (V)1.2
Maximum Collector Base Voltage (V)13
Maximum Transition Frequency (MHz)44000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)4
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4V 0.045A 160mW Automotive 4-Pin(3+Tab) SOT-343 T/R
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