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BFQ19SH6327XTSA1
BFQ19SH6327XTSA1
RF BJT BFQ19SH6327XTSA1
Infineon
BFQ19SH6327XTSA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Supplier PackageSOT-89
Standard Package NameSOT
Minimum DC Current Gain70@70mA@8V
Typical Power Gain (dB)11.5
Maximum Noise Figure (dB)3(Typ)
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Operational Bias Conditions8V/70mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)1000
Typical Input Capacitance (pF)3.9
Typical Output Capacitance (pF)1.05
Maximum DC Collector Current (A)0.12
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)5500(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)22(Typ)
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)100000
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.12 to 0.5
Maximum 3rd Order Intercept Point (dBm)32(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 15V 0.12A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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