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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BFR181WE6327XT
BFR181WE6327XT
RF BJT BFR181WE6327XT
Infineon
BFR181WE6327XT
--
Diodes, Transistors and Thyristors
RF BJT
BFR181WE6327XT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-323
Standard Package NameSOT-323
Minimum DC Current Gain70@5mA@8V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)175
Maximum DC Collector Current (A)0.02
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.02A 3-Pin SOT-323 T/R
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