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BFR505,215
BFR505,215
RF BJT BFR505,215
NXP
BFR505,215
--
Diodes, Transistors and Thyristors
RF BJT
BFR505,215.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageTO-236AB
Standard Package NameSOT-23
Minimum DC Current Gain60@5mA@6V
Typical Power Gain (dB)17
Maximum Noise Figure (dB)2.1
Number of Elements per Chip1
Operational Bias Conditions6V/5mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.018
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)9000(Typ)
Maximum Operating Temperature (°C)175
Maximum Power 1dB Compression (dBm)4(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)50
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)10(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 15V 0.018A 150mW 3-Pin TO-236AB T/R
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