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BFS17SE6327
BFS17SE6327
RF BJT BFS17SE6327
Infineon
BFS17SE6327
--
Diodes, Transistors and Thyristors
RF BJT
BFS17SE6327.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
ConfigurationDual
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-363
Standard Package NameSOT-26
Minimum DC Current Gain20@2mA@1V|20@25mA@1V
Typical Power Gain (dB)14
Maximum Noise Figure (dB)5
Number of Elements per Chip2
Operational Bias Conditions5V/20mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)280
Typical Input Capacitance (pF)0.9
Typical Output Capacitance (pF)0.55
Maximum DC Collector Current (A)0.025
Maximum Emitter Base Voltage (V)2.5
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)2500(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)11(Typ)
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)10000
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)22.5(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.4@1mA@10mA
Description
Trans RF BJT NPN 15V 0.025A 280mW 6-Pin SOT-363 T/R
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