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BFU730LXZ
BFU730LXZ
RF BJT BFU730LXZ
NXP
BFU730LXZ
--
Diodes, Transistors and Thyristors
RF BJT
BFU730LXZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1
Package Height0.33(Max)
Package Length0.6
Supplier PackageDFN_C
Minimum DC Current Gain205@2mA@2V
Typical Power Gain (dB)24.5
Maximum Noise Figure (dB)0.75(Typ)
Number of Elements per Chip1
Minimum DC Current Gain Range200 to 300
Maximum Power Dissipation (mW)160
Typical Input Capacitance (pF)0.31
Typical Output Capacitance (pF)0.084
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)1.3
Maximum Collector Base Voltage (V)10
Maximum Transition Frequency (MHz)53000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)11.7(Typ)
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)3
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)25.5(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
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