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BFY181ESZZZA1
BFY181ESZZZA1
RF BJT BFY181ESZZZA1
Infineon
BFY181ESZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingBox
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle Dual Emitter
Package Width1.78
Package Height0.95
Package Length1.78
Supplier PackageMicro-X
Standard Package NameMicro-X
Minimum DC Current Gain55@5mA@6V
Number of Elements per Chip1
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)175
Maximum DC Collector Current (A)0.02
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)12
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.02A 175mW 4-Pin Micro-X Box
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