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BFY193CPZZZA1
BFY193CPZZZA1
RF BJT BFY193CPZZZA1
Infineon
BFY193CPZZZA1
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingBox
Pin Count4
AutomotiveNo
PCB changed4
Part StatusNRND
ConfigurationDual Common Emitter
Package Width1.78
Package Height0.95
Package Length1.78
Supplier PackageMicro-X1
Minimum DC Current Gain50@30mA@8V
Typical Power Gain (dB)13.5
Maximum Noise Figure (dB)2.9
Number of Elements per Chip2
Operational Bias Conditions5V/50mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)580
Maximum DC Collector Current (A)0.08
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)12
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 12V 0.08A 580mW 4-Pin Micro-X1 Box
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