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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BFY740B01PB4SA1
BFY740B01PB4SA1
RF BJT BFY740B01PB4SA1
Infineon
BFY740B01PB4SA1
--
Diodes, Transistors and Thyristors
RF BJT
BFY740B01PB4SA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusNRND
ConfigurationSingle Dual Emitter
Package Width1.88(Max)
Package Height1.1(Max)
Package Length1.88(Max)
Supplier PackageMicro-X
Minimum DC Current Gain130@20mA@3V
Typical Power Gain (dB)24
Maximum Noise Figure (dB)1(Typ)
Number of Elements per Chip1
Operational Bias Conditions3V/20mA
Minimum DC Current Gain Range120 to 200
Typical Input Capacitance (pF)0.6
Typical Output Capacitance (pF)0.07
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)1.2
Maximum Collector Base Voltage (V)13
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)5000
Maximum Collector-Emitter Voltage (V)4
Maximum Collector Cut-Off Current (nA)10000
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4V 0.03A 4-Pin Micro-X Tray
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