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LM3046M
LM3046M
RF BJT LM3046M
Texas Instruments
LM3046M
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
HTS8542330001
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count14
AutomotiveNo
Lead ShapeGull-wing
PCB changed14
Part StatusObsolete
ConfigurationQuint
Package Width4(Max)
Package Height1.5(Max)
Package Length8.75(Max)
Supplier PackageSOIC
Standard Package NameSOP
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@1mA@3V
Maximum Noise Figure (dB)3.25(Typ)
Number of Elements per Chip5
Minimum DC Current Gain Range30 to 50
Maximum Power Dissipation (mW)750
Typical Input Capacitance (pF)0.6
Typical Output Capacitance (pF)0.58
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)550(Typ)
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Emitter Cut-Off Current (nA)500
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)40
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Collector-Emitter Saturation Voltage (V)0.23(Typ)@1mA@10mA
Description
Trans RF BJT NPN 15V 0.05A 750mW 14-Pin SOIC Tube
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