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MPSH17G
MPSH17G
RF BJT MPSH17G
onsemi
MPSH17G
--
Diodes, Transistors and Thyristors
RF BJT
MPSH17G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain25@5mA@10V
Typical Power Gain (dB)24
Maximum Noise Figure (dB)6
Number of Elements per Chip1
Operational Bias Conditions12V/5mA
Minimum DC Current Gain Range2 to 30
Maximum Power Dissipation (mW)350
Typical Output Capacitance (pF)0.9(Max)
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)800(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance357°C/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@1mA@10mA
Description
Trans RF BJT NPN 15V 350mW 3-Pin TO-92 Box
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