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ON5088,115
ON5088,115
RF BJT ON5088,115
NXP
ON5088,115
--
Diodes, Transistors and Thyristors
RF BJT
ON5088,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.35(Max)
Package Height0.75(Max)
Package Length2.2(Max)
Supplier PackageDFP
Minimum DC Current Gain160@10mA@2V
Typical Power Gain (dB)27
Number of Elements per Chip1
Operational Bias Conditions2V/25mA
Minimum DC Current Gain Range120 to 200
Maximum Power Dissipation (mW)136
Typical Input Capacitance (pF)0.4
Typical Output Capacitance (pF)0.075
Maximum DC Collector Current (A)0.04
Maximum Emitter Base Voltage (V)1
Maximum Collector Base Voltage (V)10
Maximum Transition Frequency (MHz)55000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)3
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 3V 0.04A 136mW 4-Pin(3+Tab) DFP T/R
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