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PBR951,215
PBR951,215
RF BJT PBR951,215
Nexperia
PBR951,215
--
Diodes, Transistors and Thyristors
RF BJT
PBR951,215.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageTO-236AB
Standard Package NameSOT-23
Minimum DC Current Gain50@5mA@6V
Typical Power Gain (dB)14
Maximum Noise Figure (dB)2(Typ)
Number of Elements per Chip1
Operational Bias Conditions6V/30mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)365
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)1.5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)8000(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)100
Maximum Collector-Emitter Voltage (V)10
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 10V 0.1A 365mW 3-Pin TO-236AB T/R
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