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TSDF1205W-GS08
TSDF1205W-GS08
RF BJT TSDF1205W-GS08
Vishay
TSDF1205W-GS08
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.8(Min)
Package Length2.05
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain50@2mA@2V
Typical Power Gain (dB)13
Maximum Noise Figure (dB)1.3(Typ)
Number of Elements per Chip1
Operational Bias Conditions2V/5mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)40
Typical Input Capacitance (pF)0.15
Typical Output Capacitance (pF)0.2
Maximum DC Collector Current (A)0.012
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)9
Maximum Transition Frequency (MHz)12000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Emitter Cut-Off Current (nA)2000
Maximum Collector-Emitter Voltage (V)4
Maximum Collector Cut-Off Current (nA)100
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum Collector-Emitter Voltage Range (V)<20
Maximum Junction Ambient Thermal Resistance450K/W
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.5mA@5mA
Description
Trans RF BJT NPN 4V 0.012A 4-Pin(3+Tab) SOT-343 T/R
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