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AFM907NT1
AFM907NT1
RF FETs AFM907NT1
NXP
AFM907NT1
--
Diodes, Transistors and Thyristors
RF FETs
AFM907NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count16
AutomotiveNo
PCB changed16
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width4
Package Height0.95(Max)
Package Length6
Output Power (W)8.4(Typ)
Supplier PackageHVSON EP
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)941
Minimum Frequency (MHz)136
Typical Power Gain (dB)20.7
Typical Drain Efficiency (%)73.9
Maximum Power Dissipation (mW)6570
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)9.8
Typical Input Capacitance @ Vds (pF)95.7@7.5V
Typical Output Capacitance @ Vds (pF)55.2@7.5V
Typical Reverse Transfer Capacitance @ Vds (pF)2.4@7.5V
Description
Trans RF MOSFET N-CH 30V 16-Pin HVSON EP T/R
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