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RF FETs AFT05MP075GNR1
NXP
AFT05MP075GNR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 5 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 65 |
| Configuration | Dual Common Source |
| Package Width | 9.07(Max) |
| Package Height | 2.64(Max) |
| Package Length | 17.58(Max) |
| Output Power (W) | 70(Typ) |
| Supplier Package | TO-270 W GULL |
| Maximum IDSS (uA) | 3 |
| Process Technology | LDMOS |
| Standard Package Name | TO-270 W GULL |
| SVHC Exceeds Threshold | Yes |
| Maximum Frequency (MHz) | 520 |
| Minimum Frequency (MHz) | 136 |
| Typical Power Gain (dB) | 21 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 68.5 |
| Maximum Power Dissipation (mW) | 690000 |
| Maximum Gate Source Voltage (V) | 12 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Forward Transconductance (S) | 7.3 |
| Typical Input Capacitance @ Vds (pF) | 148@12.5V |
| Typical Output Capacitance @ Vds (pF) | 64@12.5V |
| Maximum Gate Source Leakage Current (nA) | 600 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.3@12.5V |
| Description |
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