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AFV10700HSR5
AFV10700HSR5
RF FETs AFV10700HSR5
NXP
AFV10700HSR5
--
Diodes, Transistors and Thyristors
RF FETs
AFV10700HSR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Output Power (W)700(Typ)
Supplier PackageNI-780S
Maximum IDSS (uA)10
Process TechnologyLDMOS
Maximum Frequency (MHz)1215
Minimum Frequency (MHz)960
Typical Power Gain (dB)19.2
Typical Drain Efficiency (%)58.5
Maximum Power Dissipation (mW)526000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)105
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.16@50V
Description
Trans RF FET N-CH 105V 5-Pin NI-780S T/R
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