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RF FETs BLF145,112
NXP
BLF145,112
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Diodes, Transistors and Thyristors
RF FETs
BLF145,112.pdf
Specification
Product AttributeAttribute Value
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
PackagingBulk
Pin Count4
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR50
ConfigurationSingle Dual Source
Package Width9.78(Max)
Package Height7.47(Max)
Package Length24.87(Max)
Output Power (W)30
Supplier PackageSOT-123A
Mode of OperationSSB Class-AB|SSB Class-A
Maximum Frequency (MHz)28
Minimum Frequency (MHz)1
Typical Power Gain (dB)27|20
Number of Elements per Chip1
Typical Drain Efficiency (%)35
Maximum Power Dissipation (mW)68000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)6
Typical Forward Transconductance (S)1.2(Min)
Typical Input Capacitance @ Vds (pF)125@28V
Typical Output Capacitance @ Vds (pF)75@28V
Maximum Drain Source Resistance (mOhm)750@10V
Typical Reverse Transfer Capacitance @ Vds (pF)7@28V
Description
Trans RF FET N-CH 65V 6A 4-Pin SOT-123A Bulk
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