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BLF368,112
BLF368,112
RF FETs BLF368,112
NXP
BLF368,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF368,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.77(Max)
Package Length34.17(Max)
Output Power (W)300
Supplier PackageCDFM
Mode of OperationCW Class-AB
Maximum Frequency (MHz)225
Minimum Frequency (MHz)170
Typical Power Gain (dB)15
Number of Elements per Chip2
Typical Drain Efficiency (%)70
Maximum Power Dissipation (mW)500000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)25
Typical Forward Transconductance (S)7.5
Typical Input Capacitance @ Vds (pF)495@32V
Typical Output Capacitance @ Vds (pF)340@32V
Maximum Drain Source Resistance (mOhm)150@10V
Typical Reverse Transfer Capacitance @ Vds (pF)40@32V
Description
Trans RF FET N-CH 65V 25A 5-Pin CDFM Bulk
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