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BLF369,112
BLF369,112
RF FETs BLF369,112
NXP
BLF369,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF369,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width15.4
Package Height6.3
Package Length44.5
Output Power (W)500
Supplier PackageLDMOST
Mode of Operation2-Tone Class-AB|CW Class-AB|Pulsed RF Class-AB
Process TechnologyLDMOS
Maximum Frequency (MHz)500
Minimum Frequency (MHz)10
Typical Power Gain (dB)19|18
Number of Elements per Chip2
Typical Drain Efficiency (%)60
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)15
Typical Input Capacitance @ Vds (pF)400@32V
Typical Output Capacitance @ Vds (pF)230@32V
Maximum Drain Source Resistance (mOhm)40(Typ)@14.5V
Typical Reverse Transfer Capacitance @ Vds (pF)15@32V
Description
Trans RF FET N-CH 65V 5-Pin LDMOST Bulk
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