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RF FETs BLF6G10LS-200RN
NXP
BLF6G10LS-200RN
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 9.91(Max) |
| Package Height | 4.72(Max) |
| Package Length | 20.7(Max) |
| Output Power (W) | 40(Typ) |
| Supplier Package | SOT-502B |
| Maximum IDSS (uA) | 4.2 |
| Mode of Operation | 2-Carrier W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1000 |
| Minimum Frequency (MHz) | 700 |
| Typical Power Gain (dB) | 20 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 28.5 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Maximum Operating Temperature (°C) | 225 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 49 |
| Typical Forward Transconductance (S) | 18 |
| Maximum Drain Source Resistance (mOhm) | 93@6.15V |
| Maximum Gate Source Leakage Current (nA) | 420 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3@28V |
| Description |
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