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BLF6G27LS-40P
BLF6G27LS-40P
RF FETs BLF6G27LS-40P
NXP
BLF6G27LS-40P
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.75(Max)
Package Length20.7(Max)
Output Power (W)20(Typ)
Supplier PackageLDMOST
Mode of Operation1-Carrier W-CDMA|IS-95
Process TechnologyLDMOS
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)2500
Typical Power Gain (dB)17.5
Number of Elements per Chip2
Typical Drain Efficiency (%)30
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)15.5
Typical Forward Transconductance (S)2.9
Maximum Drain Source Resistance (mOhm)360(Typ)@6.15V
Description
Trans RF MOSFET N-CH 65V 15.5A 5-Pin LDMOST
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