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BLL6H0514-25
BLL6H0514-25
RF FETs BLL6H0514-25
NXP
BLL6H0514-25
--
Diodes, Transistors and Thyristors
RF FETs
BLL6H0514-25.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width5.97(Max)
Package Height4.67(Max)
Package Length20.45(Max)
Output Power (W)25(Min)
Supplier PackageLDMOST
Maximum IDSS (uA)1
Mode of OperationPulsed RF
Process TechnologyLDMOS
Typical Fall Time (ns)6
Typical Rise Time (ns)20
Maximum Frequency (MHz)1400
Minimum Frequency (MHz)500
Typical Power Gain (dB)21
Number of Elements per Chip1
Typical Drain Efficiency (%)59
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)100
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2.5
Typical Forward Transconductance (S)0.15
Maximum Drain Source Resistance (mOhm)2750@3.75V
Maximum Gate Source Leakage Current (nA)100
Description
Trans RF MOSFET N-CH 100V 2.5A 3-Pin LDMOST
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