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BLS6G2731-6
BLS6G2731-6
RF FETs BLS6G2731-6
NXP
BLS6G2731-6
--
Diodes, Transistors and Thyristors
RF FETs
BLS6G2731-6.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Output Power (W)6
Mode of OperationPulsed RF
Process TechnologyLDMOS
Maximum Frequency (MHz)3100
Minimum Frequency (MHz)2700
Typical Power Gain (dB)15
Number of Elements per Chip1
Typical Drain Efficiency (%)33
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)3.5
Typical Forward Transconductance (S)0.81(Min)
Maximum Drain Source Resistance (mOhm)1260@6.15V
Description
Trans RF MOSFET N-CH 60V 3.5A 3-Pin CDFM
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