Product Attribute | Attribute Value |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Maximum VSWR | 5 |
Configuration | Single |
Output Power (W) | 6 |
Mode of Operation | Pulsed RF |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 3100 |
Minimum Frequency (MHz) | 2700 |
Typical Power Gain (dB) | 15 |
Number of Elements per Chip | 1 |
Typical Drain Efficiency (%) | 33 |
Maximum Gate Source Voltage (V) | 13 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Operating Temperature (°C) | 200 |
Minimum Operating Temperature (°C) | -65 |
Maximum Continuous Drain Current (A) | 3.5 |
Typical Forward Transconductance (S) | 0.81(Min) |
Maximum Drain Source Resistance (mOhm) | 1260@6.15V |
Description |