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RF FETs BLU6H0410L-600P
NXP
BLU6H0410L-600P
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Pin Count | 5 |
| Automotive | Unknown |
| PCB changed | 5 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 40(Min) |
| Configuration | Dual Common Source |
| Package Width | 10.29(Max) |
| Package Height | 4.7(Max) |
| Package Length | 41.28(Max) |
| Output Power (W) | 250(Min) |
| Supplier Package | SOT-539A |
| Maximum IDSS (uA) | 2.8 |
| Mode of Operation | Pulsed RF Class-AB |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 900 |
| Minimum Frequency (MHz) | 400 |
| Typical Power Gain (dB) | 21 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 46 |
| Maximum Gate Source Voltage (V) | 11 |
| Maximum Drain Source Voltage (V) | 110 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Input Capacitance @ Vds (pF) | 220@50V |
| Typical Output Capacitance @ Vds (pF) | 74@50V |
| Maximum Drain Source Resistance (mOhm) | 143@6.15V |
| Maximum Gate Source Leakage Current (nA) | 280 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.2@50V |
| Description |
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