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RF FETs CLF1G0035S-100,112
NXP
CLF1G0035S-100,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| Type | JFET |
| EU RoHS | Compliant |
| Material | GaN |
| Mounting | Surface Mount |
| ECCN (US) | 3A001B3A3 |
| Packaging | Bulk |
| Pin Count | 3 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 5.97(Max) |
| Package Height | 4.67(Max) |
| Package Length | 9.25(Max) |
| Output Power (W) | 100(Typ) |
| Supplier Package | SOT-467B |
| Mode of Operation | Pulsed RF |
| Process Technology | HEMT |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 5 |
| Maximum Frequency (MHz) | 3500 |
| Minimum Frequency (MHz) | 0 |
| Typical Power Gain (dB) | 12 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 53 |
| Maximum Gate Source Voltage (V) | 3 |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Gate Threshold Voltage (V) | 1.3 |
| Maximum Operating Temperature (°C) | 250 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Forward Transconductance (S) | 4 |
| Description |
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