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J309G
J309G
RF FETs J309G
onsemi
J309G
--
Diodes, Transistors and Thyristors
RF FETs
J309G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeJFET
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Supplier PackageTO-92
Maximum IDSS (uA)30000
Standard Package NameTO-92
Typical Power Gain (dB)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Maximum Gate Source Voltage (V)25
Maximum Drain Source Voltage (V)25
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)0.02(Max)
Maximum Gate Source Leakage Current (nA)1
Description
Trans RF FET N-CH 25V 3-Pin TO-92 Box
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