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LET16045C
LET16045C
RF FETs LET16045C
STMicroelectronics
LET16045C
--
Diodes, Transistors and Thyristors
RF FETs
LET16045C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Typ)
ConfigurationSingle
Package Width6.1(Max)
Package Height4.45(Max)
Package Length20.57(Max)
Output Power (W)54(Typ)
Supplier PackageCase M-243
Process TechnologyLDMOS
Maximum Frequency (MHz)1600
Typical Power Gain (dB)16
Number of Elements per Chip1
Typical Drain Efficiency (%)55
Maximum Power Dissipation (mW)108000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)9
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)58@28V
Typical Output Capacitance @ Vds (pF)29@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.8@28V
Description
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose
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