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MMBFJ309
MMBFJ309
RF FETs MMBFJ309
onsemi
MMBFJ309
--
Diodes, Transistors and Thyristors
RF FETs
MMBFJ309.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeJFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Maximum IDSS (uA)30000
Standard Package NameSOT
Typical Power Gain (dB)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Maximum Gate Source Voltage (V)-25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Forward Transconductance (S)0.02(Max)
Maximum Gate Source Leakage Current (nA)1
Description
Trans RF FET N-CH 3-Pin SOT-23 T/R
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