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MMRF1310HR5
MMRF1310HR5
RF FETs MMRF1310HR5
NXP
MMRF1310HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1310HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)300(Typ)
Supplier PackageNI-780
Maximum IDSS (uA)10
Mode of Operation1-Tone
Process TechnologyLDMOS
Maximum Frequency (MHz)600
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)26.5
Typical Drain Efficiency (%)74
Maximum Power Dissipation (mW)1050000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)188@50V
Typical Output Capacitance @ Vds (pF)76@50V
Typical Reverse Transfer Capacitance @ Vds (pF)0.8@50V
Description
Trans RF MOSFET N-CH 133V 5-Pin NI-780 T/R
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